Semiconductor device fabrication Semiconductor device fabrication Alfred Y. Cho is the Director of the Semiconductor Research Laboratory at Bell Labs. He is known as the "father of molecular beam epitaxy"; a technique he developed at that facility in the late 1960's. He is also the co-invenntor, with Federico Capasso of quantum cascade lasers at Bell Labs in 1994. ...more on Wikipedia about "Alfred Y. Cho"
B-staging is a process that utilizes heat or UV light to remove the majority of solvent from an adhesive, thereby allowing construction to be “staged.” In between adhesive application, assembly and curing, the product can be held for a period of time, without sacrificing performance. ...more on Wikipedia about "B-staging"
Ball bonding is a type of wire bonding, and is the most common way to make the electrical interconnections between a microchip and the outside world as part of semiconductor device fabrication. ...more on Wikipedia about "Ball bonding"
A barrier metal is a material used in integrated circuits to chemically isolate semiconductors from soft metal interconnects, while maintaining an electrical connection between them. For instance, a layer of barrier metal must surround every copper interconnection in modern copper-based chips, to prevent diffusion of copper into surrounding materials. ...more on Wikipedia about "Barrier metal"
A boule is a term used to describe a single crystal ingot produced by synthetic means. ...more on Wikipedia about "Boule (crystal)"
The Bridgeman technique is a method of growing single crystal ingots or boules. ...more on Wikipedia about "Bridgeman technique"
Chemical vapor deposition (CVD) is a chemical process for depositing thin films of various materials. In a typical CVD process the substrate is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit. Frequently, volatile byproducts are also produced, which are removed by gas flow through the reaction chamber. ...more on Wikipedia about "Chemical vapor deposition"
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Chemical-mechanical planarization or Chemical-mechanical polishing, commonly abbreviated CMP, is a technique used in semiconductor fabrication for planarizing the top surface of an in-process semiconductor wafer or other substrate. ...more on Wikipedia about "Chemical-mechanical planarization"
The Czochralski process is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold) and salts. ...more on Wikipedia about "Czochralski process"
Deep Reactive Ion Etching or DRIE is a highly anisotropic etch process developed in the semiconductor industry and used to create deep and high aspect ratio channels in materials such as silicon. Widely used for MEMS and high value integrated capacitors, channels with vertical sides and having aspect ratios greater than 20:1 can be produced. ...more on Wikipedia about "Deep reactive ion etching"
Die attachment is the step during the integrated circuit packaging phase of semiconductor device fabrication during which a die is mounted and fixed to the package or support structure. ...more on Wikipedia about "Die attachment"
Die preparation is a step of semiconductor device fabrication during which a wafer is prepared for IC packaging and IC testing. The process of die preparation typically consists of 2 steps: wafer mounting and die cutting. ...more on Wikipedia about "Die preparation"
In semiconductor production, doping refers to the process of intentionally introducing impurities into an extremely pure (also referred to as intrinsic) semiconductor in order to change its electrical properties. The impurities are dependent upon the type of semiconductor. Lightly and moderately doped semiconductor is referred to as extrinsic. A semiconductor which is doped to such high levels that it acts more like a conductor than a semiconductor is called degenerate. ...more on Wikipedia about "Doping (semiconductor)"
Dry etching refers to the removal of material, typically a masked pattern of semiconductor material, by exposing the material to a bombardment of ions (usually a plasma of Nitrogen, Chlorine and Boron Trichloride) that dislodge portions of the material from the exposed surface. Unlike with many (but not all, see isotropic etching) of the wet chemical etchants used in wet etching, the dry etching process typically etches directionally or anisotropically. ...more on Wikipedia about "Dry Etching"
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DUT boards are used in automated integrated circuit testing where the term DUT stands for Device Under Test, referring to the circuit being tested. ...more on Wikipedia about "DUT Board"
== Conventional electron-beam lithography == ...more on Wikipedia about "Electron beam lithography"
Epitaxy is a specialized thin-film deposition technique. It involves the growth of crystals of one material on the crystal face of another ( heteroepitaxy) or the same ( homoepitaxy) material. Epitaxy forms a thin film whose material lattice structure and orientation is identical to that of the substrate on which it is deposited. Most importantly, if the substrate is a single crystal, then the thin film will also be a single crystal. Contrast with self-assembled monolayer and mesotaxy. ...more on Wikipedia about "Epitaxy"
An epiwafer is a wafer of semiconducting material made by epitaxial growth (called epitaxy) for use in making microelectronic devices such as light-emitting diodes (LEDs). Two methods of growing the epitaxial layer on existing silicon or other wafers are currently used: metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). ...more on Wikipedia about "Epiwafer"
Extreme Ultraviolet Lithography (also known as EUV or EUVL) is a Next-Generation Lithography technology capable of creating nanometer-scale patterns for use in semiconductor processing. ...more on Wikipedia about "Extreme ultraviolet lithography"
A fab is a factory for producing integrated circuits. It is a short form of "fabrication". Another term commonly used is semiconductor foundry. ...more on Wikipedia about "Fab (semiconductors)"
Focused ion beam, also known as FIB, is a process known in the semiconductor industry to patch, or fix or to modify an existing semiconductor device. The modification in the semiconductor device intention is to save a long and expensive ...more on Wikipedia about "Focused ion beam"
This article is about the factory in which integrated circuits are made. For other uses of the term foundry see foundry (disambiguation). ...more on Wikipedia about "Foundry (electronics)"
Furnace annealing is a process used in semiconductor device fabrication which consist of heating multiple semiconductor wafers in order to affect their electrical properties. Heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film to film or film to wafer substrate interfaces, densify deposited films, change states of grown films, repair damage from implants, move dopants or drive dopants from one film into another or from a film into the wafer substrate. ...more on Wikipedia about "Furnace anneal"
In microprocessor design, gate count refers to the number of transistor switches, or gates, that are needed to implement a design. Even with today's process technology providing what was formerly considered impossible numbers of gates on a single chip, gate counts remain one of the most important overall factors in the end price of a chip. Designs with fewer gates will typically cost less, and for this reason gate count remains a commonly used metric in the industry. ...more on Wikipedia about "Gate count"
Integrated circuit encapsulation (IC encapsulation, encapsulation) refers to the design and manufacturing of protective packages for integrated circuits. ...more on Wikipedia about "Integrated circuit encapsulation"
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