Semiconductor materials Semiconductor materials Aluminium arsenide (also aluminum arsenide), AlAs, is a semiconductor material with almost the same lattice constant as GaAs and AlGaAs and wider band gap than GaAs. ...more on Wikipedia about "Aluminium arsenide"
Aluminium gallium arsenide (also Aluminum gallium arsenide) ( Alx Ga1-x As) is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between GaAs and AlAs. ...more on Wikipedia about "Aluminium gallium arsenide"
Aluminium gallium indium phosphide ( , also AlInGaP, InGaAlP, etc.) is a semiconductor material. ...more on Wikipedia about "Aluminium gallium indium phosphide"
Aluminium gallium nitride (AlGaN) is a semiconductor material. It is an alloy of aluminium nitride and gallium nitride. ...more on Wikipedia about "Aluminium gallium nitride"
Aluminium gallium phosphide ( , also GaAlP), a phosphide of aluminium and gallium, is a semiconductor material. It is an alloy of aluminium phosphide and gallium phosphide. ...more on Wikipedia about "Aluminium gallium phosphide"
Aluminium nitride ( Al N) is a nitride of aluminium. Its wurzite phase (w-AlN) is an extremely wide bandgap (about 6.0 eV) semiconductor material which has potential application for deep ultraviolet optoelectronics. ...more on Wikipedia about "Aluminium nitride"
Aluminum antimonide/Aluminium antimonide (AlSb) is a semiconductor material of the III-V family containing aluminum and antimony. It has a CAS number 25152-52-7. The lattice constant is 0.61 nm. The molecular weight is 148.7 g mol-1. The density is 4200 kg m-3. The bandgap is approximately 1.6 eV. ...more on Wikipedia about "Aluminum antimonide"
Amorphous silicon (a-Si) is the non-crystalline allotropic form of silicon. Silicon is normally tetrahedrally bonded to four neighboring silicon atoms. This is also the case in amorphous silicon, however, it does not form a continuous crystalline lattice as in crystalline silicon. Some atoms may actually have dangling bonds, which occur when it does not bond to four neighboring atoms. Since not all the atoms are four-fold coordinated, amorphous silicon is said to be under-coordinated. These dangling bonds are defects in the continuous random network, which can be passivated by introducing hydrogen into the silicon. It then becomes hydrogenated amorphous silicon. ...more on Wikipedia about "Amorphous silicon"
Boron nitride is a binary chemical compound, consisting of equal proportions of boron and nitrogen, with formula BN. Structurally, it is isoelectronic to carbon and takes on similar physical forms: a hexagonal, graphite-like one, and a cubic, diamond-like one. Cubic boron nitride is one of the hardest materials known, behind only diamond and ultrahard fullerite. It is widely used for grinding and as a material for tools in industry. This is in part because it does not dissolve into iron, nickel, and related alloys at high temperatures like diamond does. Hexagonal boron nitride finds use as a high-temperature lubricant where the electrical conductivity or reactivity of graphite would be problematic. ...more on Wikipedia about "Boron nitride"
Cadmium arsenide ( Cd3 As2) is a crystalline semiconductor with a tetragonal structure in the II-V family. It is a narrow gap semiconductor with an energy gap of 0.14 eV. The electron mobility is very large at ambient temperature. It is a n-type intrinsic semiconductor. Its CAS number is . ...more on Wikipedia about "Cadmium arsenide"
Cadmium selenide ( Cd Se) is a solid compound of cadmium and selenium. When found in the zincblende crystal structure, it is an intrinsic semiconductor with a band gap of 1.70 eV at 300 K. ...more on Wikipedia about "Cadmium selenide"
Cadmium sulfide (UK English sulphide), the mineral greenockite, is an hexagonal, yellowish crystal with specific gravity of 4.7 and Mohs hardness of 3.8. ...more on Wikipedia about "Cadmium sulfide"
Cadmium telluride (CdTe) is a crystalline compound formed from cadmium and tellurium with a zinc blende (cubic) crystal structure ( space group F43m). In the bulk crystalline form it is a direct bandgap semiconductor. ...more on Wikipedia about "Cadmium telluride"
Cadmium zinc telluride, (CdZnTe) or CZT, is (as the name indicates) a compound of cadmium, zinc and tellurium or more strictly speaking, an alloy of cadmium telluride and zinc telluride. A wide, direct bandgap semiconductor, it is used in a variety of applications, including radiation detectors, photorefractive gratings, electro-optic modulators and terahertz generation and detection. ...more on Wikipedia about "Cadmium zinc telluride"
Copper indium gallium selenide (CIGS) is a new semiconductor material comprising of copper, indium, gallium, and selenium, CuInGaSe2. Its main use is for high-efficiency photovoltaic cells (CIGS cells), in the form of polycrystalline thin films. Unlike the silicon cells based on p-n junction, the structure of CIGS is a complex heterojunction system. The best efficiency achieved as of April 2003 was 16.5%; 30% can be reached by using optics to concentrate the light. ...more on Wikipedia about "Copper indium gallium selenide"
Copper(I) oxide or cuprous oxide (Cu2O) is an oxide of copper. It is insoluble in water and organic solvents. Copper(I) oxide dissolves in concentrated ammonia solution to form the colourless complex
Copper(II) chloride is the higher chloride of copper, with the formula CuCl2. It occurs naturally as the mineral eriochalcite. It is a brown solid which slowly absorbs moisture to form a blue-green di hydrate. ...more on Wikipedia about "Copper(II) chloride"
Copper(II) oxide or cupric oxide (CuO) is the higher oxide of copper. It is a black solid which melts above 1200 °C with some loss of oxygen. It can be formed by heating copper in air, but in this case it is formed along with copper(I) oxide; thus, it is better prepared by heating copper(II) nitrate, copper(II) hydroxide or copper(II) carbonate: ...more on Wikipedia about "Copper(II) oxide"
Diamond is one of the two best known forms (or allotropes) of carbon, whose hardness and high dispersion of light make it useful for industrial applications and jewelry (the other equally well known allotrope is graphite). Diamonds are specifically renowned as a mineral with superlative physical qualities - they make excellent abrasives because they can only be scratched by other diamonds, which also means they hold a polish extremely well and retain luster. About 130 million carats (26,000 kg) are mined annually, with a total value of nearly USD $9 billion. ...more on Wikipedia about "Diamond"
Float-zone silicon is a high-purity alternative to silicon grown by the Czochralski process. The concentrations of impurities, such as carbon and oxygen are extremely low. Impurities such as nitrogen, which are thought to bring about an improvement in mechanical strength of the wafers, are now being intentionally added during the growth stages. ...more on Wikipedia about "Float-zone silicon"
Gallium antimonide is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm with a zinc blende crystal structure. The band gap energy is 0.726 eV. ...more on Wikipedia about "Gallium antimonide"
Gallium arsenide ( ) is a chemical compound composed of gallium and arsenic. It is an important semiconductor, and is used to make devices such as microwave frequency integrated circuits (ie, MMICs), infrared light-emitting diodes and laser diodes. ...more on Wikipedia about "Gallium arsenide"
Gallium arsenide phosphide ( ) is a semiconductor material, an alloy of gallium arsenide and gallium phosphide. ...more on Wikipedia about "Gallium arsenide phosphide"
Gallium nitride ( ) is a semiconductor material with wide (3.4 eV) band gap, used in optoelectronic, high-power and high-frequency devices. It is a binary group III/ group V direct bandgap semiconductor. Its sensitivity to ionizing radiation is low (like other group III nitrides), making it a suitable material for solar cell arrays for satellites. ...more on Wikipedia about "Gallium nitride"
Gallium phosphide ( ), a phosphide of gallium, is a compound semiconductor material with indirect band gap of 2.26 eV. It is a solid crystallic material with melting point of 1480°C. It is an intrinsic semiconductor of n-type. Its lattice constant is 0.545 nm. Its electron mobility is 110 cm /V-s and its hole mobility is 75 cm /V-s. Its CAS number is . It has the appearance of pale orange pieces. It is odorless and insoluble in water. ...more on Wikipedia about "Gallium phosphide"
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