Semiconductors Semiconductors The 45 nanometer (45 nm) process is the next milestone (to be commercially viable in mid 2007 to early 2008) in semiconductor manufacturing and fabrication. The term 45 nm denotes the average feature size of the semiconductor. For reference, silicon lattice spacing is around 0.2 nm, synapses are typically around 50 nanometers across, the Human Immunodeficiency Virus [HIV] is around 120 nm in diameter, a human red blood cell is typically 6000-8000 nm in diameter, and a human hair typically is 80000 nm in diameter. Intel has stated that it is developing this technology, and AMD and IBM are partnering on the 45nm process. ...more on Wikipedia about "45 nanometer"
The 65 nanometer (65 nm) process is the next milestone as of 2005 in semiconductor manufacturing and fabrication. The term 65 nm denotes the average feature size of the semiconductor. However, minimum feature sizes can reach as low as 35nm on a "65nm" process. For reference, the Human Immunodeficiency Virus (HIV) is around 120 nm in diameter, a human red blood cell typically 6000-8000 nm in diameter, and a human hair typically 80000 nm in diameter. Companies currently pursuing 65nm fabrication include AMD (collaborating with IBM) and Intel. ...more on Wikipedia about "65 nanometer"
Since 2002 and up to 2004, the 90 nanometer (90 nm) process has been a buzzword in the electronic, the LSI and semiconductor manufacturing, and fabrication industries. "Going beyond 90 nm" represents a breakthrough and a milestone. Related industries, such as the FPGA, network chip, DSP, flash memory chip and nanotechnology industries are also affected and are monitoring 90-nanometer trends as of 2004. Among the companies who have adopted and disclosed their 90 nanometer processes, but taking different approaches, are Intel, IBM, Texas Instruments Inc., Motorola, Fujitsu, TSMC. A majority of these companies made their disclosures in August of 2002. The 90 nanometer process refers to the average feature size. However, the minimum feature size on 90 nanometer chips can actually be quite smaller, down to around 45 nanometers. ...more on Wikipedia about "90 nanometer"
In solid state physics and related applied fields, the band gap is the energy difference between the top of the valence band and the bottom of the conduction band in insulators and semiconductors. It is often spelled "bandgap". ...more on Wikipedia about "Band gap"
Charge carrier denotes in physics a free (mobile, unbound) particle carrying an electric charge. Examples are electrons and ions. In semiconductor physics, the travelling vacancies in the valance-band electron population ( holes) are treated as charge carriers. ...more on Wikipedia about "Charge carrier"
In semiconductors and insulators, the conduction band is the range of electron energy, higher than that of the valence band, sufficient to make the electrons free to accelerate under the influence of an applied electric field and thus constitute an electric current. ...more on Wikipedia about "Conduction band"
In semiconductor physics, the depletion region, also called depletion layer or depletion zone, is an insulating region within a conductive, doped semiconductor material where the charge carriers have been swept away through recombination. Understanding the depletion region is key to explaining modern semiconductor electronics: the operation of diodes, bipolar junction transistors, field effect transistors, and variable capacitance diodes rely on depletion region phenomena. ...more on Wikipedia about "Depletion region" Pure http://www.shortopedia.com. Pure Information Power. shortopedia
In semiconductor physics, a direct bandgap means that the conduction band lies directly above the valence band, in momentum space (see E-k plots). A semiconductor with a direct bandgap can be used to emit light. Indirect bandgap semiconductors such as crystalline silicon cannot do so efficiently. ...more on Wikipedia about "Direct bandgap"
A dopant, also called doping agent and dope, is an impurity element added to a semiconductor lattice in quite low concentrations in order to alter the optical/electrical properties of the semiconductor. ...more on Wikipedia about "Dopant"
In solid state physics, the electronic band structure (or simply band structure) of a solid is the series of "forbidden" and "allowed" energy bands that it contains. The band structure determines a material's electronic properties, optical properties, and a variety of other properties. ...more on Wikipedia about "Electronic band structure"
Floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator technology on the history of its biasing and the carrier recombination processes. The transistor's body forms a capacitor against the insulated substrate; the charge accumulates on this capacitor and may cause adverse effects, eg. opening of parasitic transistors in the structure and causing off-state leakages, resulting in higher current consumption and in case of DRAM in loss of information from the memory cells. It also causes the history effect, the dependence of the threshold voltage of the transistor on its previous states. ** ...more on Wikipedia about "Floating body effect"
Heteroepitaxy is a kind of epitaxy performed with materials that are different from each other. In heteroepitaxy, a crystalline film ...more on Wikipedia about "Heteroepitaxy"
A heterojunction is a semiconductor junction which is composed of layers of dissimilar semiconductor material, these materials having non-equal band gaps. In such a structure, the implementable diode characterstics can closely approach those of an idealized diode. Furthermore, the diode model parameters that define the diode current vs. voltage response can be tuned by adjusting the thicknesses and band gaps of the layers. ...more on Wikipedia about "Heterojunction"
Homoepitaxy is a kind of epitaxy performed with only one material. In homoepitaxy, a crystalline film is grown on a substrate or film of the same material. This technology is applied to growing more purified film than the substrate and to fabricating layers with different doping levels. ...more on Wikipedia about "Homoepitaxy"
I-type semiconductor is a semiconductor that is left in its intrinsic state, without being doped. The presence and type of charge carriers is therefore determined by the material itself instead of the impurities; the amount of electrons and holes is roughly equal. ...more on Wikipedia about "I-type semiconductor"
Impact ionization is the process in a material by which one energetic charge carrier can lose energy by the creation of other charge carriers. If this occures in a region of high electrical field then it can result in avalanche breakdown, this process is exploited in avalanche type devices to provide gain. ...more on Wikipedia about "Impact ionization"
In semiconductor physics, an indirect bandgap is a bandgap in which the minimum energy in the conduction band is shifted by a k-vector, which is determined by the material's crystal structure. ...more on Wikipedia about "Indirect bandgap"
The International Technology Roadmap for Semiconductors is a set of documents produced by a group of semiconductor industry experts. These experts are representative of the sponsoring organisations which include the Semiconductor Induustry Associations of the US, Europe, Japan, Korea and Taiwan. ...more on Wikipedia about "International Technology Roadmap for Semiconductors"
An intrinsic semiconductor, also called an undoped semiconductor, is a material which has the conductivity of a semiconductor without the introduction of a deliberate dopant species. See also I-type semiconductor. ...more on Wikipedia about "Intrinsic semiconductor"
Lattice constant, or a, defines the distance between atoms in crystal lattice. It is a measure of structural compatibility between different materials. ...more on Wikipedia about "Lattice constant"
A Low-K dielectric is one with a small dielectric constant. In digital circuits, insulating dielectrics separate the conducting parts (wire interconnects and transistors) from one another. To make higher-speed chips, the transistors must be placed closer and closer together, and thus the insulating layer becomes thinner. This leads to charge build up and crosstalk, adversely affecting the performance of the chip. ...more on Wikipedia about "Low-K"
An N-type semiconductor is obtained by carrying out a process of doping, that is adding a certain type of atoms to the semiconductor in order to increase the number of free (in this case negative) charge carriers. ...more on Wikipedia about "N-type semiconductor"
Negative luminescence is a physical phenomenon by which an electronic device emits less thermal radiation when an electric current is passed through it than it does in thermal equilibrium (current off). When viewed by a thermal camera, an operating negative luminescent device looks colder than its environment. ...more on Wikipedia about "Negative Luminescence"
A p-n junction is formed by combining N-type and P-type semiconductors together in very close contact. The term junction refers to the region where the two types of semiconductor meet. It can be thought of as the border region between the P-type and N-type blocks as shown in the following diagram: ...more on Wikipedia about "P-n junction"
p-n junction isolation is a method used to electrically isolate electronic components, such as transistors, on an integrated circuit (IC) by surrounding the components with reverse biased p-n junctions. ...more on Wikipedia about "P-n junction isolation" Evergreen www.shortopedia.com!!!
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