Semiconductors

A P-type semiconductor is obtained by carrying out a process of doping, that is adding a certain type of atoms to the semiconductor in order to increase the number of free (in this case positive) charge carriers. ...more on Wikipedia about "P-type semiconductor"

A power device is a discrete semiconductor component which is used to control current in electric motors, electronic equipment and cars, and increasingly to regulate and save power in consumer electronic equipment, such as portable appliances. ...more on Wikipedia about "Power device"

Quantum heterostructure is a heterostructure in a substrate (usually a semiconductor material), with size restricting the movements of the charge carriers and forcing them into a quantum confinement, leading to formation of a set of discrete energy levels the carriers can exist at. Quantum heterostructures have sharper density of states than structures of more conventional sizes. ...more on Wikipedia about "Quantum heterostructure"

A Schottky barrier is a metal- semiconductor junction which has rectifying characteristics, suitable for use as a diode. The largest differences between a Schottky barrier and a p-n junction are its typically lower junction voltage, and decreased (almost nonexistent) depletion width in the metal. ...more on Wikipedia about "Schottky barrier"

A semiconductor is a material with an electrical conductivity that is intermediate between that of an insulator and a conductor. A semiconductor behaves as an insulator at very low temperature, and has an appreciable electrical conductivity at room temperature although much lower conductivity than a conductor. Commonly used semiconducting materials are silicon, germanium, and gallium arsenide. ...more on Wikipedia about "Semiconductor"

Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum. ...more on Wikipedia about "Semiconductor device"

Semiconductor Research Corporation is a non-profit consortium founded in 1982 and based in North Carolina, USA. The consortium manages a program of basic and applied university research on semiconductors on behalf of its members. In return for their dues, the member companies receive early access to the research results and access to the students who have done the work upon their graduation. ...more on Wikipedia about "Semiconductor Research Corporation"

Silicate glasses have been commonly used in the field of semiconductor device fabrication as an insulator between active layers of the semiconductor device. ...more on Wikipedia about "Silicate glass"

Silicon on insulator (SOI) is a layered structure consisting of a thin layer of silicon, from 50 nm to 100 µm, which is created on an insulating substrate, which is usually sapphire or silicon with an insulating layer of silicon dioxide 80 nm thick on its surface. This process reduces the amount of electrical charge that the transistor has to move during a switching operation, increasing speed (up to 15%) and reducing switching energy (up to 20%) over CMOS-based chips. SOI chips cost more to produce and are generally used for high-end applications. ...more on Wikipedia about "Silicon on insulator"

Thin films are material layers of about 1 µm thickness. Electronic semiconductor devices and optical coatings are the main applications benefiting from thin film construction. Some work is being done with ferromagnetic thin films as well for use as computer memory. ...more on Wikipedia about "Thin film"

Transmission line measurement is a technique used in semiconductor physics and engineering to determine the contact resistance between a metal and a semiconductor. The technique involves making a series of metal-semiconductor contacts separated by various distances. Probes are applied to pairs of contacts, and the resistance between them is measured by applying a voltage across the contacts and measuring the resulting current. The current flows from the first probe, into the metal contact, across the metal-semiconductor junction, through the sheet of semiconductor, across the metal-semiconductor junction again (except this time in the other direction), into the second contact, and from there into the second probe and into the external circuit to be measured by an ammeter. The resistance measured is a linear combination (sum) of the contact resistance of the first contact, the contact resistance of the second contact, and the sheet resistance of the semiconductor in-between the contacts. ...more on Wikipedia about "Transmission line measurement"

In solids, the valence band is the highest range of electron energies where electrons are normally present at zero temperature. In semiconductors and insulators, there is a bandgap above the valence band, followed by a conduction band above that. In metals, the conduction band is the valence band. The rest of this article refers to the valence band in semiconductors and insulators. ...more on Wikipedia about "Valence band"

Wide Bandgap Semiconductors have applications in optoelectronic and power devices. ...more on Wikipedia about "Wide bandgap semiconductors"

Zentrum Mikroelektronik Dresden AG (ZMD AG) is a semiconductor manufacturer based in Dresden. In the 1980s, ZMD was regarded as the heart of the GDR- microelectronics research. ZMD was founded as part of VEB Kombinat Robotron in 1961. In 1969 (the year AMD was founded) the company operated under the name Arbeitsgemeinschaft Molekularelektronik Dresden. ZMD produced the GDR's first 1-megabyte DRAM in 1988. However, serial production was not achieved by 1990. ZMD GmbH (the predecessor of the current corporation) was founded in 1993 and in December 2001 the company became an " AG". ...more on Wikipedia about "ZMD"

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